![]() ![]() Kenji Suzuki 2, Takuya Yoshida 1, Yuki Haraguchi 2, Hidenori Koketsu 2, Atsushi Narazaki 2 ( 1mqSemi AG, Switzerland 2Silvaco Europe Ltd., United Kingdom) 13:00-13:25ġ-3Low Switching Loss Diode of 600V RC-IGBT with New Contact Structure Munaf Rahimo 1, Iulian Nistor 1, David Green 2 (Mitsubishi Electric Corporation, Japan) 12:35-13:00ġ-2Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT Koichi Nishi, Chen Ze, Koji Tanaka, Keisuke Eguchi, Takamasa Miyazaki, Akihiko Furukawa ![]() PL2-2How System Basis Chips rise to the power and reliability challenges for future-proof electrification and autonomous vehicle electronic control unit designsĮrwan Hemon (NXP) Oral sessions Tuesday JSession 1: IGBTsġ2:10-13:25 Chair Shigeto Honda(Mitsubishi Electric Corporation) Yi Tang(Starpower Semiconductor) 12:10-12:35ġ-1Self-Turn-on-Free 1200V Scaled CSTBT™ Driven by 5V Gate Voltage with Wide SOA PL2-1Building Blocks of Past, Present and Future BCD Technologiesįrançois Hébert (Global Foundries) 15:00-15:40 PL1-2GaN 2.0: Power FinFETs, Complementary Gate Drivers and Low-Cost Vertical Devicesġ4:20-15:40 Chair Ichiro Omura(Kyushu Institute of Technology) Kevin Chen(Hong Kong University of Science and Technology) 14:20-15:00 Yasushi Shinojima (MIRISE Technologies Corporation,Japan) 13:20-14:00 ![]() PL1-1Automotive semiconductors in the CASE era ISPSD2021 Program at a glance Opening session Monday May 31, 2021ġ2:10-12:40 Chair Kimimori Hamada(PDPlus LLC) Ichiro Omura(Kyushu Institute of Technology) Plenary sessions Monday Plenary 1ġ2:40-14:00 Chair Kimimori Hamada(PDPlus LLC) Wai Tung Ng(University of Toronto) 12:40-13:20 ![]()
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